New Formulation of Cardiff Behavioral Model Including DC Bias Voltage Dependence
نویسندگان
چکیده
A new mathematical formulation for the Cardiff nonlinear behavioral model is presented in this work which includes dc bias voltages (drain and gate) into model. It has been verified by modeling a GaN on SiC high electron mobility transistor (HEMT) at 3.5 GHz. For case presented, interpolation of load–pull data resulted more than 90% reduction density required to generate over wide range points.
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ژورنال
عنوان ژورنال: IEEE Microwave and Wireless Components Letters
سال: 2022
ISSN: ['1531-1309', '1558-1764']
DOI: https://doi.org/10.1109/lmwc.2022.3140653